Description: The invention also relates to ion implanters adapted for performing the method. the relative movement between the substrate and an implant beam is controlled to maintain a desired and uniform to maintain a desired rate of implant of the required atomic species

Category: Rate My Implant

Url: http://www.wipo.int/ipdl/IPDL-CIMAGES/view/pct/getbykey5?KEY=03/88299.031023&ELEMENT_SET=DECL

Date: Oct 7, 2005

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